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FQB55N10TM

FQB55N10TM

MOSFET N-CH 100V 55A D2PAK

FQB55N10TM

FQB55N10TM

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Part No :

FQB55N10TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 55A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10253 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 02 - Jun 06 2024
PDF
FQB55N10TM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:26mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2730 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 155W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB55N10TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB55N10TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB55N10TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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