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STD3NM60N

STD3NM60N

MOSFET N-CH 600V 3.3A DPAK

STD3NM60N

STD3NM60N

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Part No :

STD3NM60N

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 3.3A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12409 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 18 - Jun 22 2024
PDF
STD3NM60N PDF
Type Description
Series:MDmesh™ II
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:188 pF @ 50 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
STD3NM60N is available at GangBo-ic.com, Please review product page below for detailed information, including STD3NM60N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STD3NM60N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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