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IPD78CN10NGBUMA1

IPD78CN10NGBUMA1

PFET, 13A I(D), 100V, 0.078OHM,

0621006900

0621006900

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IPD78CN10NGBUMA1

IPD78CN10NGBUMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD78CN10NGBUMA1

Manufacturer
Rochester Electronics
Description
PFET, 13A I(D), 100V, 0.078OHM,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
070107 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
IPD78CN10NGBUMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:716 pF @ 50 V
FET Feature:-
Power Dissipation (Max):31W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD78CN10NGBUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD78CN10NGBUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD78CN10NGBUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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