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IPB50N10S3L16ATMA1

IPB50N10S3L16ATMA1

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IPB50N10S3L16ATMA1

IPB50N10S3L16ATMA1

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Part No :

IPB50N10S3L16ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 50A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
050805 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2025
PDF
IPB50N10S3L16ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:15.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4180 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB50N10S3L16ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB50N10S3L16ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB50N10S3L16ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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