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IPP029N06NAKSA1

IPP029N06NAKSA1

MOSFET N-CH 60V 24A/100A TO220-3

1674760000

1674760000

MARKING SYSTEM ESG 9/17 K 200/BX

IPP029N06NAKSA1

IPP029N06NAKSA1

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Part No :

IPP029N06NAKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 24A/100A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
111111 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 02 - Jun 06 2024
PDF
IPP029N06NAKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.8V @ 75µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP029N06NAKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP029N06NAKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP029N06NAKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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