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IPI180N10N3GXKSA1

IPI180N10N3GXKSA1

MOSFET N-CH 100V 43A TO262-3

3E206-0100KV

3E206-0100KV

CONN PLUG IEEE 1394 FIREWIRE SLD

IPI180N10N3GXKSA1

IPI180N10N3GXKSA1

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Part No :

IPI180N10N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 43A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
961496 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 30 - Jun 03 2024
PDF
IPI180N10N3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 50 V
FET Feature:-
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI180N10N3GXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI180N10N3GXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI180N10N3GXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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