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STB26NM60ND

STB26NM60ND

Image is for reference, please contact us to get the real picture

Part No :

STB26NM60ND

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 21A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
251525 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 19 - May 23 2025
PDF
STB26NM60ND PDF
Type Description
Series:FDmesh™ II
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:54.6 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1817 pF @ 100 V
FET Feature:-
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB26NM60ND is available at GangBo-ic.com, Please review product page below for detailed information, including STB26NM60ND price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STB26NM60ND to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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