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FDMC86261P

FDMC86261P

MOSFET P-CH 150V 2.7A/9A 8MLP

FDMC86261P

FDMC86261P

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Part No :

FDMC86261P

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 150V 2.7A/9A 8MLP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12894 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2024
PDF
FDMC86261P PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1360 pF @ 75 V
FET Feature:-
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
FDMC86261P is available at GangBo-ic.com, Please review product page below for detailed information, including FDMC86261P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDMC86261P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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