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RM120N30T2

RM120N30T2

MOSFET N-CH 30V 120A TO220-3

ART915X2509EP60-IC

ART915X2509EP60-IC

RFID TAG R/W 902-928MHZ ENCAP

RM120N30T2

RM120N30T2

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Part No :

RM120N30T2

Manufacturer
Rectron USA
Description
MOSFET N-CH 30V 120A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
422842 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:120A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 25 V
FET Feature:-
Power Dissipation (Max):120W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
RM120N30T2 is available at GangBo-ic.com, Please review product page below for detailed information, including RM120N30T2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM120N30T2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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