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IPT059N15N3ATMA1

IPT059N15N3ATMA1

MOSFET N-CH 150V 155A 8HSOF

XC6503D12APR-G

XC6503D12APR-G

IC REG LIN 1.25V 500MA SOT89-5

IPT059N15N3ATMA1

IPT059N15N3ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPT059N15N3ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 155A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12374 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 19 - Jun 23 2024
PDF
IPT059N15N3ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:155A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7200 pF @ 75 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
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