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FDD6680AS

FDD6680AS

MOSFET N-CH 30V 55A TO252

FDD6680AS

FDD6680AS

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Part No :

FDD6680AS

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 55A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10485 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 15 - Jun 19 2024
PDF
FDD6680AS PDF
Type Description
Series:PowerTrench®, SyncFET™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:55A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.2 pF @ 15 V
FET Feature:-
Power Dissipation (Max):60W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6680AS is available at GangBo-ic.com, Please review product page below for detailed information, including FDD6680AS price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDD6680AS to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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