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TK30E06N1,S1X

TK30E06N1,S1X

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TK30E06N1,S1X

TK30E06N1,S1X

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Part No :

TK30E06N1,S1X

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 60V 43A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
214321 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 30 - Nov 03 2025
PDF
TK30E06N1,S1X PDF
Type Description
Series:U-MOSVIII-H
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:43A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1050 pF @ 30 V
FET Feature:-
Power Dissipation (Max):53W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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