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NVMFS5833NWFT1G

NVMFS5833NWFT1G

Image is for reference, please contact us to get the real picture

Part No :

NVMFS5833NWFT1G

Manufacturer
Rochester Electronics
Description
N-CHANNEL, MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 26 - Oct 30 2025
PDF
NVMFS5833NWFT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.714 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 112W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN
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