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IPD65R660CFDBTMA1

IPD65R660CFDBTMA1

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Part No :

IPD65R660CFDBTMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 6A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 28 - Aug 01 2025
PDF
IPD65R660CFDBTMA1 PDF
Type Description
Series:CoolMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:660mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:615 pF @ 100 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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