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FQB6N50TM

FQB6N50TM

Image is for reference, please contact us to get the real picture

Part No :

FQB6N50TM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 5.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
79845 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 22 - May 26 2025
PDF
FQB6N50TM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB6N50TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB6N50TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB6N50TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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