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HUF76629D3S

HUF76629D3S

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Part No :

HUF76629D3S

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 20A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
46400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Aug 01 - Aug 05 2025
PDF
HUF76629D3S PDF
Type Description
Series:UltraFET™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:52mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1285 pF @ 25 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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