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RTQ030P02TR

RTQ030P02TR

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RTQ030P02TR

RTQ030P02TR

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Part No :

RTQ030P02TR

Manufacturer
ROHM Semiconductor
Description
MOSFET P-CH 20V 3A TSMT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
445744 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 19 - May 23 2025
PDF
RTQ030P02TR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSMT6 (SC-95)
Package / Case:SOT-23-6 Thin, TSOT-23-6
RTQ030P02TR is available at GangBo-ic.com, Please review product page below for detailed information, including RTQ030P02TR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RTQ030P02TR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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