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FCU3400N80Z

FCU3400N80Z

MOSFET N-CH 800V 2A I-PAK

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FCU3400N80Z

FCU3400N80Z

Image is for reference, please contact us to get the real picture

Part No :

FCU3400N80Z

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 2A I-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11691 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 26 - May 30 2025
PDF
FCU3400N80Z PDF
Type Description
Series:SuperFET® II
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 100 V
FET Feature:-
Power Dissipation (Max):32W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
FCU3400N80Z is available at GangBo-ic.com, Please review product page below for detailed information, including FCU3400N80Z price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCU3400N80Z to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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