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IPD25N06S4L30ATMA1

IPD25N06S4L30ATMA1

OPTLMOS N-CHANNEL POWER MOSFET

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IPD25N06S4L30ATMA1

IPD25N06S4L30ATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD25N06S4L30ATMA1

Manufacturer
Rochester Electronics
Description
OPTLMOS N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
777777 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2025
PDF
IPD25N06S4L30ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs:16.3 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1.22 pF @ 25 V
FET Feature:-
Power Dissipation (Max):29W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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