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IRLH5030TRPBF

IRLH5030TRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRLH5030TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 13A/100A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
178017 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 31 - Jun 04 2025
PDF
IRLH5030TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5185 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerVDFN
IRLH5030TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLH5030TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLH5030TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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