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J2000-28

J2000-28

CUTTER SIDE TAPERED BEVEL 8.13"

RD3L080SNTL1

RD3L080SNTL1

MOSFET N-CH 60V 8A TO252

RD3L080SNTL1

RD3L080SNTL1

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Part No :

RD3L080SNTL1

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 60V 8A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12542 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 03 - Jun 07 2024
PDF
RD3L080SNTL1 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:80mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 10 V
FET Feature:-
Power Dissipation (Max):15W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RD3L080SNTL1 is available at GangBo-ic.com, Please review product page below for detailed information, including RD3L080SNTL1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RD3L080SNTL1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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