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FQP4N90C

FQP4N90C

MOSFET N-CH 900V 4A TO220-3

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FQP4N90C

FQP4N90C

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Part No :

FQP4N90C

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 900V 4A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10780 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 11 - Jun 15 2024
PDF
FQP4N90C PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:960 pF @ 25 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP4N90C is available at GangBo-ic.com, Please review product page below for detailed information, including FQP4N90C price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP4N90C to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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