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FQI9N25CTU

FQI9N25CTU

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FQI9N25CTU

FQI9N25CTU

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Part No :

FQI9N25CTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 250V 8.8A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12000 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2025
PDF
FQI9N25CTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:430mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI9N25CTU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI9N25CTU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI9N25CTU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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