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STH3N150-2

STH3N150-2

Image is for reference, please contact us to get the real picture

Part No :

STH3N150-2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 1500V 2.5A H2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
168516 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 14 - May 18 2025
PDF
STH3N150-2 PDF
Type Description
Series:PowerMESH™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:939 pF @ 25 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:H²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab) Variant
STH3N150-2 is available at GangBo-ic.com, Please review product page below for detailed information, including STH3N150-2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STH3N150-2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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