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ISL9N302AS3ST

ISL9N302AS3ST

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Part No :

ISL9N302AS3ST

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 75A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
50762 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 06 - May 10 2025
PDF
ISL9N302AS3ST PDF
Type Description
Series:UltraFET™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11 pF @ 15 V
FET Feature:-
Power Dissipation (Max):345W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ISL9N302AS3ST is available at GangBo-ic.com, Please review product page below for detailed information, including ISL9N302AS3ST price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for ISL9N302AS3ST to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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