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BSZ076N06NS3GATMA1

BSZ076N06NS3GATMA1

MOSFET N-CH 60V 20A TSDSON-8

BSZ076N06NS3GATMA1

BSZ076N06NS3GATMA1

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Part No :

BSZ076N06NS3GATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 20A TSDSON-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
399139 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 11 - Jun 15 2024
PDF
BSZ076N06NS3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerVDFN
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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