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FQB34N20LTM

FQB34N20LTM

POWER FIELD-EFFECT TRANSISTOR, 3

FQB34N20LTM

FQB34N20LTM

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Part No :

FQB34N20LTM

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13306 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 08 - Jun 12 2024
PDF
FQB34N20LTM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3.9 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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