MOSFET N-CH 900V 5.1A TO262-3
Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.2Ohm @ 2.8A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs: | 28 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 710 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO262-3 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRFF213Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
FDMC86340Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 14A/48A POWER33 |
![]() |
RQ7E055ATTCRROHM Semiconductor |
MOSFET P-CH 30V 5.5A TSMT8 |
![]() |
FDMS2504SDCRochester Electronics |
MOSFET N-CH 25V 42A/49A DLCOOL56 |
![]() |
FDP8442-F085Rochester Electronics |
23A, 40V, 0.0031OHM, N-CHANNEL, |
![]() |
SI1443EDH-T1-BE3Vishay / Siliconix |
MOSFET P-CH 30V 4A/4A SC70-6 |
![]() |
IMW65R072M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
![]() |
STL62P3LLH6STMicroelectronics |
MOSFET P-CH 30V 62A POWERFLAT |
![]() |
DMN1004UFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 70A POWERDI3333 |
![]() |
SCT3080AW7TLROHM Semiconductor |
TRANS SJT N-CH 650V 29A TO263-7 |
![]() |
BSP316PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 680MA SOT223-4 |
![]() |
NTLJD3182FZTAGRochester Electronics |
MOSFET P-CH 20V 2.2A 6WDFN |
![]() |
AOT2500LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 150V 11.5/152A TO220 |