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NTD18N06LT4G

NTD18N06LT4G

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NTD18N06LT4G

NTD18N06LT4G

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Part No :

NTD18N06LT4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 18A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10139 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 04 - May 08 2025
PDF
NTD18N06LT4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:65mOhm @ 9A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:675 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 55W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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