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IRF9Z34NPBF

IRF9Z34NPBF

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IRF9Z34NPBF

IRF9Z34NPBF

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Part No :

IRF9Z34NPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 55V 19A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17069 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 04 - May 08 2025
PDF
IRF9Z34NPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRF9Z34NPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF9Z34NPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF9Z34NPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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