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FDFMA3P029Z

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MOSFET P-CH 30V 3.3A 6MICROFET

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FDFMA3P029Z

FDFMA3P029Z

Image is for reference, please contact us to get the real picture

Part No :

FDFMA3P029Z

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 30V 3.3A 6MICROFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13521 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 07 - May 11 2025
PDF
FDFMA3P029Z PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:87mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:435 pF @ 15 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-MicroFET (2x2)
Package / Case:6-VDFN Exposed Pad
FDFMA3P029Z is available at GangBo-ic.com, Please review product page below for detailed information, including FDFMA3P029Z price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDFMA3P029Z to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

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