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IRFI830G

IRFI830G

MOSFET N-CH 500V 3.1A TO220-3

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IRFI830G

IRFI830G

Image is for reference, please contact us to get the real picture

Part No :

IRFI830G

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 500V 3.1A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
430143 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 31 - Jun 04 2025
PDF
IRFI830G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:610 pF @ 25 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3 Full Pack, Isolated Tab
IRFI830G is available at GangBo-ic.com, Please review product page below for detailed information, including IRFI830G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFI830G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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