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IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1

MOSFET N-CH 650V 43.3A TO247-3

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IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1

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Part No :

IPW65R080CFDAFKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 43.3A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10659 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 30 - Jun 03 2024
PDF
IPW65R080CFDAFKSA1 PDF
Type Description
Series:Automotive, AEC-Q101, CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs:161 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4440 pF @ 100 V
FET Feature:-
Power Dissipation (Max):391W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
IPW65R080CFDAFKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPW65R080CFDAFKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPW65R080CFDAFKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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