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SIT8008AI-31-33E-29.500000X

SIT8008AI-31-33E-29.500000X

MEMS OSC XO 29.5000MHZ H/LV-CMOS

TK290P65Y,RQ

TK290P65Y,RQ

MOSFET N-CH 650V 11.5A DPAK

TK290P65Y,RQ

TK290P65Y,RQ

Image is for reference, please contact us to get the real picture

Part No :

TK290P65Y,RQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 650V 11.5A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13662 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 31 - Nov 04 2025
PDF
TK290P65Y,RQ PDF
Type Description
Series:DTMOSV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 300 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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