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SI1070X-T1-GE3

SI1070X-T1-GE3

MOSFET N-CH 30V 1.2A SC89-6

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SI1070X-T1-GE3

SI1070X-T1-GE3

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Part No :

SI1070X-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 1.2A SC89-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11180 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 25 - May 29 2025
PDF
SI1070X-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:99mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id:1.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:385 pF @ 15 V
FET Feature:-
Power Dissipation (Max):236mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-6
Package / Case:SOT-563, SOT-666
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