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IRFB4229PBF

IRFB4229PBF

IRFB4229 - 12V-300V N-CHANNEL PO

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IRFB4229PBF

IRFB4229PBF

Image is for reference, please contact us to get the real picture

Part No :

IRFB4229PBF

Manufacturer
Rochester Electronics
Description
IRFB4229 - 12V-300V N-CHANNEL PO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11410 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2025
PDF
IRFB4229PBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:46mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4.56 pF @ 25 V
FET Feature:-
Power Dissipation (Max):330W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
IRFB4229PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFB4229PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFB4229PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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