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SIT8008AC-13-33E-2.000000E

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MEMS OSC XO 2.0000MHZ H/LV-CMOS

NVMFD6H852NLWFT1G

NVMFD6H852NLWFT1G

MOSFET N-CH 80V 7A/25A 8DFN DL

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3EZ180D10/TR12

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NVMFD6H852NLWFT1G

NVMFD6H852NLWFT1G

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Part No :

NVMFD6H852NLWFT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 80V 7A/25A 8DFN DL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:25.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:521 pF @ 40 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
Package / Case:8-PowerTDFN
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