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SIT8008BI-83-33E-40.000000Y

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MEMS OSC XO 40.0000MHZ H/LV-CMOS

IPB04N03LAT

IPB04N03LAT

MOSFET N-CH 25V 80A TO263-3

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IPB04N03LAT

IPB04N03LAT

Image is for reference, please contact us to get the real picture

Part No :

IPB04N03LAT

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10584 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2025
PDF
IPB04N03LAT PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3877 pF @ 15 V
FET Feature:-
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB04N03LAT is available at GangBo-ic.com, Please review product page below for detailed information, including IPB04N03LAT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB04N03LAT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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