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WM-1-6-PK

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XPN9R614MC,L1XHQ

XPN9R614MC,L1XHQ

MOSFET P-CH 40V 40A 8TSON

TSM-126-01-F-SV-P

TSM-126-01-F-SV-P

CONN HEADER SMD 26POS 2.54MM

VI-QA30-CQU

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VI-QA30-CQU 24V 5V 400W 200W A

XPN9R614MC,L1XHQ

XPN9R614MC,L1XHQ

Image is for reference, please contact us to get the real picture

Part No :

XPN9R614MC,L1XHQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH 40V 40A 8TSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19057 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 22 - May 26 2025
Type Description
Series:U-MOSVI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):840mW (Ta), 100W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.6)
Package / Case:8-PowerVDFN
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