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SIS780DN-T1-GE3

SIS780DN-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIS780DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 18A PPAK1212-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11857 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
PDF
SIS780DN-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:722 pF @ 15 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):27.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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