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SIS110DN-T1-GE3

SIS110DN-T1-GE3

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Part No :

SIS110DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 5.2A/14.2A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13110 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 01 - Nov 05 2025
PDF
SIS110DN-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:5.2A (Ta), 14.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:54mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 24W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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