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IPA60R190C6XKSA1

IPA60R190C6XKSA1

MOSFET N-CH 600V 20.2A TO220-FP

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IPA60R190C6XKSA1

IPA60R190C6XKSA1

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Part No :

IPA60R190C6XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 20.2A TO220-FP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
17262 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2025
PDF
IPA60R190C6XKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 100 V
FET Feature:-
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
IPA60R190C6XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA60R190C6XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA60R190C6XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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