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IPI600N25N3GAKSA1

IPI600N25N3GAKSA1

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Part No :

IPI600N25N3GAKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 250V 25A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12528 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 22 - May 26 2025
PDF
IPI600N25N3GAKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.35 pF @ 100 V
FET Feature:-
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI600N25N3GAKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI600N25N3GAKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI600N25N3GAKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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