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SIHD7N60ET4-GE3

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MOSFET N-CH 600V 7A TO252AA

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SIHD7N60ET4-GE3

SIHD7N60ET4-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIHD7N60ET4-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 7A TO252AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
113211 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 26 - May 30 2025
PDF
SIHD7N60ET4-GE3 PDF
Type Description
Series:E
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 100 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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