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IPAN65R650CEXKSA1

IPAN65R650CEXKSA1

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Part No :

IPAN65R650CEXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 10.1A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
613361 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 09 - Jun 13 2025
PDF
IPAN65R650CEXKSA1 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:440 pF @ 100 V
FET Feature:Super Junction
Power Dissipation (Max):28W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
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