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SPD18P06PGBTMA1

SPD18P06PGBTMA1

MOSFET P-CH 60V 18.6A TO252-3

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SPD18P06PGBTMA1

SPD18P06PGBTMA1

Image is for reference, please contact us to get the real picture

Part No :

SPD18P06PGBTMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 60V 18.6A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
323732 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 08 - May 12 2025
PDF
SPD18P06PGBTMA1 PDF
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:-
Power Dissipation (Max):80W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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