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FQD10N20TM

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Part No :: FQD10N20TM

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 200V 7.6A DPAK

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 648864 pieces

Shipped from: HK warehouse

Expected Shipping Date: May 20 - May 24 2025

PDF: FQD10N20TM PDF

Type	Description
Series:	QFET®
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	670 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 51W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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