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IRF3808STRRPBF

IRF3808STRRPBF

MOSFET N-CH 75V 106A D2PAK

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IRF3808STRRPBF

IRF3808STRRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRF3808STRRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 75V 106A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
249124 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 27 - May 31 2025
PDF
IRF3808STRRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5310 pF @ 25 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3808STRRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF3808STRRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF3808STRRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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