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2N7635-GA

2N7635-GA

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Part No :

2N7635-GA

Manufacturer
GeneSiC Semiconductor
Description
TRANS SJT 650V 4A TO257
Catalog
Transistors - FETs, MOSFETs - Single
Availability
399839 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 14 - May 18 2025
PDF
2N7635-GA PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:-
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:415mOhm @ 4A
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:324 pF @ 35 V
FET Feature:-
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 225°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-257
Package / Case:TO-257-3
2N7635-GA is available at GangBo-ic.com, Please review product page below for detailed information, including 2N7635-GA price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N7635-GA to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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