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IRF5803

IRF5803

MOSFET P-CH 40V 3.4A MICRO6

FHG.1B.310.CLAD72Z

FHG.1B.310.CLAD72Z

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NB0100NYS1R

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IRF5803

IRF5803

Image is for reference, please contact us to get the real picture

Part No :

IRF5803

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 40V 3.4A MICRO6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
560156 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 13 - May 17 2025
PDF
IRF5803 PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:112mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:Micro6™(TSOP-6)
Package / Case:SOT-23-6 Thin, TSOT-23-6
IRF5803 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF5803 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF5803 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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